| PART |
Description |
Maker |
| E0C63B07 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU，RAM,ROM7 Segment Type LCD Driver0000 Gates of Gate Array(4位CMOS、低电压、单片微型计算机（含4位E0C63000中央处理器核RAM，ROM7段LCD驱动器，10000门阵列）)
|
爱普生（中国）有限公
|
| S3P72K8 S3C72K8 |
singl-chip CMOS microcontroller
|
SAMSUNG[Samsung semiconductor]
|
| MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MICA RoHS Compliant: No
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| BL8581A |
PWM or Singl-Wire Dimming, 4-Channels WLED Linear Driver
|
SHANGHAI BELLING CO., LTD.
|
| IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| UPD4664312-X UPD4664312F9-B65X-CR2 UPD4664312F9-BE |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
